International Rectifier
IRF3703
Power Field-Effect Transistor, 210A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220AB
MountingThrough Hole
Power3.8W
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Technical Specifications
International Rectifier IRF3703 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
210A
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Mount
Through Hole
Number of Elements
1
Power Dissipation
3.8W
Radiation Hardening
No
RoHS Compliant
No
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF3703 Datasheet
Download the complete datasheet for International Rectifier IRF3703 to view detailed technical specifications.
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