N-Channel Power MOSFET, featuring 20V drain-source breakdown voltage and 67A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 7.9mΩ drain-source resistance and 57W power dissipation. Designed for through-hole mounting in a TO-262 package, it operates from -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 4.2ns fall time and 8.9ns turn-on delay.
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International Rectifier IRF3704ZLPBF technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 67A |
| Current Rating | 67A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 11.1mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 4.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 1.22nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 57W |
| Radiation Hardening | No |
| Rds On Max | 7.9mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 8.9ns |
| DC Rated Voltage | 20V |
| Width | 4.83mm |
| RoHS | Compliant |
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