N-Channel Power MOSFET, featuring 20V drain-source breakdown voltage and 67A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 7.9mΩ drain-source resistance and 57W power dissipation. Designed for through-hole mounting in a TO-262 package, it operates from -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 4.2ns fall time and 8.9ns turn-on delay.
PackageTO-262
Current Rating67A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRF3704ZLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
67A
Current Rating
67A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
11.1mR
Drain to Source Voltage (Vdss)
20V
Fall Time
4.2ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
1.22nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
57W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
57W
Radiation Hardening
No
Rds On Max
7.9mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
11ns
Turn-On Delay Time
8.9ns
DC Rated Voltage
20V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3704ZLPBF Datasheet
Download the complete datasheet for International Rectifier IRF3704ZLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
