N-Channel Power MOSFET, TO-220AB package, featuring a 20V drain-source breakdown voltage and a maximum continuous drain current of 67A. This silicon, metal-oxide semiconductor FET offers a low drain-source on-resistance of 7.9mΩ at a nominal gate-source voltage of 2.1V. With a maximum power dissipation of 57W and an operating temperature range of -55°C to 175°C, it is suitable for through-hole mounting. The component is lead-free and RoHS compliant, with typical switching times including an 8.9ns turn-on delay and a 4.2ns fall time.
PackageTO-220AB
Current Rating67A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3704ZPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
67A
Current Rating
67A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
11.1mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
7.9MR
Dual Supply Voltage
20V
Fall Time
4.2ns
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
1.22nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
57W
Mount
Through Hole
Nominal Vgs
2.1V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
57W
Radiation Hardening
No
Rds On Max
7.9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
Through Hole
Threshold Voltage
2.1V
Turn-Off Delay Time
11ns
Turn-On Delay Time
8.9ns
DC Rated Voltage
20V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3704ZPBF Datasheet
Download the complete datasheet for International Rectifier IRF3704ZPBF to view detailed technical specifications.
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