N-Channel Power MOSFET, D2PAK package, featuring a 20V drain-source breakdown voltage and a maximum continuous drain current of 67A. This silicon, metal-oxide semiconductor FET offers a low drain-source on-resistance of 7.9mΩ at a nominal gate-source voltage of 2.1V. With a maximum power dissipation of 57W and an operating temperature range of -55°C to 175°C, it is suitable for surface mount applications. The component is lead-free and RoHS compliant, with typical switching times including an 8.9ns turn-on delay and a 4.2ns fall time.
PackageD2PAK
Current Rating67A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRF3704ZSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
67A
Current Rating
67A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
11.1mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
7.9MR
Fall Time
4.2ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.22nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
57W
Mount
Surface Mount
Nominal Vgs
2.1V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
57W
Radiation Hardening
No
Rds On Max
7.9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
11ns
Turn-On Delay Time
8.9ns
DC Rated Voltage
20V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3704ZSPBF Datasheet
Download the complete datasheet for International Rectifier IRF3704ZSPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
