N-Channel Power MOSFET, TO-220AB package, featuring a 20V drain-source breakdown voltage and a maximum continuous drain current of 77A. Offers a low drain-source on-resistance of 8.5mΩ at a nominal gate-source voltage of 2V. This silicon, metal-oxide semiconductor FET boasts a maximum power dissipation of 88W and operates within a temperature range of -55°C to 175°C. Designed for through-hole mounting, it is RoHS compliant and lead-free.
PackageTO-220AB
Current Rating77A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3706PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
77A
Current Rating
77A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
10.5mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
8.5MR
Dual Supply Voltage
20V
Fall Time
4.8ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
2.41nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
88W
Mount
Through Hole
Nominal Vgs
2V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
88W
Rds On Max
8.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
Through Hole
Threshold Voltage
2V
Turn-Off Delay Time
17ns
DC Rated Voltage
20V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3706PBF Datasheet
Download the complete datasheet for International Rectifier IRF3706PBF to view detailed technical specifications.
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