N-Channel Power MOSFET, TO-220AB package, featuring a 20V drain-source breakdown voltage and a maximum continuous drain current of 77A. Offers a low drain-source on-resistance of 8.5mΩ at a nominal gate-source voltage of 2V. This silicon, metal-oxide semiconductor FET boasts a maximum power dissipation of 88W and operates within a temperature range of -55°C to 175°C. Designed for through-hole mounting, it is RoHS compliant and lead-free.
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International Rectifier IRF3706PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 77A |
| Current Rating | 77A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 8.5MR |
| Dual Supply Voltage | 20V |
| Fall Time | 4.8ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 2.41nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 88W |
| Rds On Max | 8.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | Through Hole |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 17ns |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
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