N-channel MOSFET featuring 20V drain-source breakdown voltage and 77A continuous drain current. Surface mount D2PAK package offers 8.5mR maximum drain-source on-resistance. Operates across a wide temperature range from -55°C to 175°C with 88W maximum power dissipation. Includes fast switching characteristics with a 4.8ns fall time and 6.8ns turn-on delay time.
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International Rectifier IRF3706SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 77A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 8.5MR |
| Dual Supply Voltage | 20V |
| Fall Time | 4.8ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 2.41nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 88W |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 6.8ns |
| RoHS | Compliant |
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