Power Field-Effect Transistor, 75A I(D), 20V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
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International Rectifier IRF3706STRRPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 77A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 4.8ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 2.41nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 88W |
| Rds On Max | 8.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 17ns |
| RoHS | Compliant |
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