International Rectifier
IRF3706STRRPBF
Power Field-Effect Transistor, 75A I(D), 20V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power88W
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Technical Specifications
International Rectifier IRF3706STRRPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
77A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
10.5mR
Drain to Source Voltage (Vdss)
20V
Fall Time
4.8ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
2.41nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
88W
Mount
Surface Mount
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
88W
Rds On Max
8.5mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
17ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3706STRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF3706STRRPBF to view detailed technical specifications.
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