IRF3707PBF

N-Channel MOSFET, 30V, 62A, 12.5mR Rds On, TO-220AB

N-Channel Power MOSFET, TO-220AB package, featuring 30V Drain to Source Voltage (Vdss) and 62A Continuous Drain Current (ID). Offers a low Drain-source On Resistance of 12.5mR (max) and 17mR (typical). Designed for through-hole mounting with a maximum power dissipation of 87W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay time of 8.5ns and turn-off delay time of 11.8ns.

PackageTO-220AB

MountingThrough Hole

PolarityN-CHANNEL

Power87W

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Technical Specifications

International Rectifier IRF3707PBF technical specifications.

General

Package/Case	TO-220AB
Continuous Drain Current (ID)	62A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	17mR
Drain to Source Voltage (Vdss)	30V
Drain-source On Resistance-Max	12.5MR
Fall Time	3.3ns
Gate to Source Voltage (Vgs)	20V
Height	8.77mm
Input Capacitance	1.99nF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	87W
Mount	Through Hole
Number of Elements	1
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Polarization	N
Power Dissipation	87W
Radiation Hardening	No
Rds On Max	12.5mR
RoHS Compliant	Yes
Series	HEXFET®
Turn-Off Delay Time	11.8ns
Turn-On Delay Time	8.5ns