N-Channel Power MOSFET, TO-220AB package, featuring 30V Drain to Source Voltage (Vdss) and 62A Continuous Drain Current (ID). Offers a low Drain-source On Resistance of 12.5mR (max) and 17mR (typical). Designed for through-hole mounting with a maximum power dissipation of 87W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay time of 8.5ns and turn-off delay time of 11.8ns.
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International Rectifier IRF3707PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 62A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 12.5MR |
| Fall Time | 3.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 1.99nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 87W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 87W |
| Radiation Hardening | No |
| Rds On Max | 12.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 11.8ns |
| Turn-On Delay Time | 8.5ns |
| RoHS | Compliant |
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