N-Channel Power MOSFET, D2PAK package, featuring 30V drain-source breakdown voltage and 62A continuous drain current. Offers a low 12.5mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 3V. Operates with a maximum power dissipation of 87W and a maximum operating temperature of 175°C. This surface-mount device is RoHS compliant and designed for efficient power switching applications.
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International Rectifier IRF3707SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 62A |
| Current Rating | 62A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 12.5MR |
| Dual Supply Voltage | 30V |
| Fall Time | 3.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.99nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 87W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 87W |
| Rds On Max | 12.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 11.8ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
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