International Rectifier
IRF3707STRRPBF
Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power87W
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Technical Specifications
International Rectifier IRF3707STRRPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
62A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
17mR
Drain to Source Voltage (Vdss)
30V
Fall Time
3.3ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.99nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
87W
Mount
Surface Mount
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
87W
Rds On Max
12.5mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
11.8ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3707STRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF3707STRRPBF to view detailed technical specifications.
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