Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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International Rectifier IRF3707ZCS technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 59A |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 1.21nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 57W |
| Radiation Hardening | No |
| Rds On Max | 9.5mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| RoHS | Not CompliantNo |
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