
Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Sign in to ask questions about the International Rectifier IRF3707ZCS datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRF3707ZCS technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 59A |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 1.21nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 57W |
| Radiation Hardening | No |
| Rds On Max | 9.5mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| RoHS | Not CompliantNo |
Download the complete datasheet for International Rectifier IRF3707ZCS to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
