
The IRF3707ZCSTRRP is a surface mount N-CHANNEL HEXFET MOSFET with a maximum drain to source breakdown voltage of 30V and a continuous drain current of 59A. It has a maximum power dissipation of 57W and a minimum operating temperature of -55°C. The device is packaged in a D2PAK and is RoHS compliant.
International Rectifier IRF3707ZCSTRRP technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 59A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 12.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.21nF |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 57W |
| Rds On Max | 9.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 12ns |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF3707ZCSTRRP to view detailed technical specifications.
No datasheet is available for this part.
