N-Channel Power MOSFET, 30V Vds, 59A continuous drain current, and 9.5mΩ maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET features a TO-220AB through-hole package, 1.8V threshold voltage, and 1.21nF input capacitance. Designed for high-power applications, it offers a maximum power dissipation of 57W and operates across a wide temperature range from -55°C to 175°C. The component is RoHS compliant and lead-free.
PackageTO-220AB
Current Rating59A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3707ZPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
59A
Current Rating
59A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
12.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
9.5MR
Dual Supply Voltage
30V
Fall Time
3.6ns
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
1.21nF
Lead Free
Lead Free
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
57W
Mount
Through Hole
Nominal Vgs
1.8V
On-State Resistance
9.5R
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
57W
Radiation Hardening
No
Rds On Max
9.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
1.8V
Turn-Off Delay Time
12ns
Turn-On Delay Time
9.8ns
DC Rated Voltage
30V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3707ZPBF Datasheet
Download the complete datasheet for International Rectifier IRF3707ZPBF to view detailed technical specifications.
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