N-Channel Power MOSFET, 30V Vds, 59A continuous drain current, and 9.5mΩ maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET features a TO-220AB through-hole package, 1.8V threshold voltage, and 1.21nF input capacitance. Designed for high-power applications, it offers a maximum power dissipation of 57W and operates across a wide temperature range from -55°C to 175°C. The component is RoHS compliant and lead-free.
PackageTO-220AB
Current Rating59A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3707ZPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 59A |
| Current Rating | 59A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 12.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9.5MR |
| Dual Supply Voltage | 30V |
| Fall Time | 3.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 1.21nF |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Through Hole |
| Nominal Vgs | 1.8V |
| On-State Resistance | 9.5R |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 57W |
| Radiation Hardening | No |
| Rds On Max | 9.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 9.8ns |
| DC Rated Voltage | 30V |
| Width | 4.69mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF3707ZPBF Datasheet
Download the complete datasheet for International Rectifier IRF3707ZPBF to view detailed technical specifications.
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