N-Channel Power MOSFET, D2PAK package, featuring 30V drain-source breakdown voltage and 62A continuous drain current. Offers a low 12mΩ maximum drain-source on-resistance and 87W power dissipation. Operates from -55°C to 175°C with a nominal gate-source voltage of 2V. Includes fast switching characteristics with turn-on delay of 7.2ns and fall time of 3.7ns. This surface-mount device is RoHS compliant and lead-free.
PackageD2PAK
Current Rating62A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3708SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
62A
Current Rating
62A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
13.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
12MR
Fall Time
3.7ns
Gate to Source Voltage (Vgs)
12V
Height
4.83mm
Input Capacitance
2.417nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
87W
Mount
Surface Mount
Nominal Vgs
2V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
87W
Radiation Hardening
No
Rds On Max
12mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
2V
Turn-Off Delay Time
17.6ns
Turn-On Delay Time
7.2ns
DC Rated Voltage
30V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3708SPBF Datasheet
Download the complete datasheet for International Rectifier IRF3708SPBF to view detailed technical specifications.
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