International Rectifier
IRF3709LPBF
Power Field-Effect Transistor, 75A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
PackageTO-262
Current Rating90A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3709LPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
90A
Current Rating
90A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
10.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
9.2ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.672nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
120W
Rds On Max
9mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
21ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3709LPBF Datasheet
Download the complete datasheet for International Rectifier IRF3709LPBF to view detailed technical specifications.
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