N-Channel Power MOSFET, TO-220AB package, featuring a 30V drain-source voltage and 90A continuous drain current. Offers a low 9mΩ maximum on-state resistance at a nominal Vgs of 3V. Designed with a single element and silicon metal-oxide semiconductor construction, this through-hole component operates within a temperature range of -55°C to 150°C. It is RoHS compliant and lead-free.
PackageTO-220AB
Current Rating90A
MountingThrough Hole
Power3.1W
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Technical Specifications
International Rectifier IRF3709PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
90A
Current Rating
90A
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
9MR
Dual Supply Voltage
30V
Input Capacitance
2.672nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Through Hole
Nominal Vgs
3V
Number of Elements
1
On-State Resistance
9R
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
3.1W
Radiation Hardening
No
Rds On Max
9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3709PBF Datasheet
Download the complete datasheet for International Rectifier IRF3709PBF to view detailed technical specifications.
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