N-Channel Power MOSFET, TO-220AB package, featuring a 30V drain-source voltage and 90A continuous drain current. Offers a low 9mΩ maximum on-state resistance at a nominal Vgs of 3V. Designed with a single element and silicon metal-oxide semiconductor construction, this through-hole component operates within a temperature range of -55°C to 150°C. It is RoHS compliant and lead-free.
PackageTO-220AB
Current Rating90A
MountingThrough Hole
Power3.1W
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Technical Specifications
International Rectifier IRF3709PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 90A |
| Current Rating | 90A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9MR |
| Dual Supply Voltage | 30V |
| Input Capacitance | 2.672nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| On-State Resistance | 9R |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF3709PBF Datasheet
Download the complete datasheet for International Rectifier IRF3709PBF to view detailed technical specifications.
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