N-Channel Power MOSFET, 30V Vds, 90A continuous drain current, 9mΩ max on-resistance. Features 120W power dissipation, 150°C max operating temperature, and D2PAK surface-mount package. Includes 2.672nF input capacitance and 9.2ns fall time. RoHS compliant and lead-free.
PackageD2PAK
Current Rating90A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3709SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
90A
Current Rating
90A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
10.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
9MR
Dual Supply Voltage
30V
Fall Time
9.2ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
2.672nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Nominal Vgs
3V
Number of Elements
1
On-State Resistance
9mR
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
120W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Threshold Voltage
3V
Turn-Off Delay Time
21ns
Turn-On Delay Time
11ns
DC Rated Voltage
30V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3709SPBF Datasheet
Download the complete datasheet for International Rectifier IRF3709SPBF to view detailed technical specifications.
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