International Rectifier
IRF3709STRLPBF
Power Field-Effect Transistor, 75A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power120W
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Technical Specifications
International Rectifier IRF3709STRLPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
90A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
10.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
9.2ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.672nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Nominal Vgs
20V
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
120W
Rds On Max
9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
21ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3709STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF3709STRLPBF to view detailed technical specifications.
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