N-channel power MOSFET with 30V drain-source breakdown voltage and 87A continuous drain current. Features low on-resistance of 6.3mR maximum and 7.8mR typical. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 79W. Packaged in a TO-262 through-hole mount configuration. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 4.7ns. RoHS compliant and lead-free.
PackageTO-262
Current Rating87A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3709ZLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
87A
Current Rating
87A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
7.8mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
6.3MR
Fall Time
4.7ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
2.13nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
79W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
79W
Radiation Hardening
No
Rds On Max
6.3mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
16ns
Turn-On Delay Time
13ns
DC Rated Voltage
30V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3709ZLPBF Datasheet
Download the complete datasheet for International Rectifier IRF3709ZLPBF to view detailed technical specifications.
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