N-channel power MOSFET with 30V drain-source breakdown voltage and 87A continuous drain current. Features low on-resistance of 6.3mR maximum and 7.8mR typical. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 79W. Packaged in a TO-262 through-hole mount configuration. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 4.7ns. RoHS compliant and lead-free.
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International Rectifier IRF3709ZLPBF technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 87A |
| Current Rating | 87A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6.3MR |
| Fall Time | 4.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 2.13nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 79W |
| Radiation Hardening | No |
| Rds On Max | 6.3mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 30V |
| Width | 4.83mm |
| RoHS | Compliant |
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