
N-Channel Power MOSFET, 30V Drain-Source Voltage, 87A Continuous Drain Current, and 6.3mΩ Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a D2PAK surface-mount package, 79W max power dissipation, and operates from -55°C to 175°C. Key electrical characteristics include a 2.13nF input capacitance, 4.7ns fall time, 13ns turn-on delay, and 16ns turn-off delay. RoHS compliant and lead-free.
International Rectifier IRF3709ZSPBF technical specifications.
Download the complete datasheet for International Rectifier IRF3709ZSPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
