N-Channel Power MOSFET, 30V Drain-Source Voltage, 87A Continuous Drain Current, and 6.3mΩ Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a D2PAK surface-mount package, 79W max power dissipation, and operates from -55°C to 175°C. Key electrical characteristics include a 2.13nF input capacitance, 4.7ns fall time, 13ns turn-on delay, and 16ns turn-off delay. RoHS compliant and lead-free.
PackageD2PAK
Current Rating87A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRF3709ZSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
87A
Current Rating
87A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
7.8mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
6.3MR
Fall Time
4.7ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
2.13nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
79W
Mount
Surface Mount
Nominal Vgs
2.25V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
79W
Radiation Hardening
No
Rds On Max
6.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
2.25V
Turn-Off Delay Time
16ns
Turn-On Delay Time
13ns
DC Rated Voltage
30V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3709ZSPBF Datasheet
Download the complete datasheet for International Rectifier IRF3709ZSPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
