N-Channel Power MOSFET featuring 100V drain-source voltage and 57A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 23mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-262 package, it boasts a maximum power dissipation of 200W and operates across a wide temperature range of -55°C to 175°C. Key switching parameters include a 12ns turn-on delay and 47ns fall time.
PackageTO-262
Current Rating57A
MountingThrough Hole
Power200W
Quick Jump:
Technical Specifications
International Rectifier IRF3710LPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
57A
Current Rating
57A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
23MR
Fall Time
47ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
3.13nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
200W
Radiation Hardening
No
Rds On Max
23mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
45ns
Turn-On Delay Time
12ns
DC Rated Voltage
100V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3710LPBF Datasheet
Download the complete datasheet for International Rectifier IRF3710LPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
