N-Channel Power MOSFET featuring 100V drain-source voltage and 57A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 23mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-262 package, it boasts a maximum power dissipation of 200W and operates across a wide temperature range of -55°C to 175°C. Key switching parameters include a 12ns turn-on delay and 47ns fall time.
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International Rectifier IRF3710LPBF technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 57A |
| Current Rating | 57A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 23MR |
| Fall Time | 47ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 3.13nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 100V |
| Width | 4.83mm |
| RoHS | Compliant |
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