N-Channel Power MOSFET, 100V Drain-Source Voltage, 57A Continuous Drain Current, and 23mΩ Max On-Resistance. This silicon, metal-oxide semiconductor field-effect transistor features a D2PAK surface-mount package, 200W maximum power dissipation, and operates from -55°C to 175°C. It includes a 4V nominal gate-source voltage, 3.13nF input capacitance, and 12ns turn-on delay.
PackageD2PAK
Current Rating57A
MountingSurface Mount
Power200W
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Technical Specifications
International Rectifier IRF3710SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 57A |
| Current Rating | 57A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 23MR |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 3.13nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Power Dissipation | 200W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 100V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF3710SPBF Datasheet
Download the complete datasheet for International Rectifier IRF3710SPBF to view detailed technical specifications.
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