
N-Channel Power MOSFET, 100V Drain-Source Voltage, 57A Continuous Drain Current, and 23mΩ Max On-Resistance. This silicon, metal-oxide semiconductor field-effect transistor features a D2PAK surface-mount package, 200W maximum power dissipation, and operates from -55°C to 175°C. It includes a 4V nominal gate-source voltage, 3.13nF input capacitance, and 12ns turn-on delay.
International Rectifier IRF3710SPBF technical specifications.
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