N-Channel Power MOSFET, 100V Drain-Source Voltage, 57A Continuous Drain Current, and 23mΩ Max On-Resistance. This silicon, metal-oxide semiconductor field-effect transistor features a D2PAK surface-mount package, 200W maximum power dissipation, and operates from -55°C to 175°C. It includes a 4V nominal gate-source voltage, 3.13nF input capacitance, and 12ns turn-on delay.
PackageD2PAK
Current Rating57A
MountingSurface Mount
Power200W
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Technical Specifications
International Rectifier IRF3710SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
57A
Current Rating
57A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
23MR
Dual Supply Voltage
100V
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
3.13nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Power Dissipation
200W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
45ns
Turn-On Delay Time
12ns
DC Rated Voltage
100V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3710SPBF Datasheet
Download the complete datasheet for International Rectifier IRF3710SPBF to view detailed technical specifications.
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