N-Channel Power MOSFET, 100V Drain-Source Breakdown Voltage, 59A Continuous Drain Current, and 18mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-262 package for through-hole mounting. It offers a maximum power dissipation of 160W and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 17ns turn-on delay and a 41ns turn-off delay.
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International Rectifier IRF3710ZLPBF technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 59A |
| Current Rating | 59A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 56ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
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