N-Channel Power MOSFET, 100V Drain-Source Breakdown Voltage, 59A Continuous Drain Current, and 18mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-262 package for through-hole mounting. It offers a maximum power dissipation of 160W and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 17ns turn-on delay and a 41ns turn-off delay.
PackageTO-262
Current Rating59A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRF3710ZLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
59A
Current Rating
59A
Drain to Source Breakdown Voltage
100V
Drain to Source Voltage (Vdss)
100V
Fall Time
56ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.9nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
18mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
41ns
Turn-On Delay Time
17ns
DC Rated Voltage
100V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3710ZLPBF Datasheet
Download the complete datasheet for International Rectifier IRF3710ZLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
