N-Channel Power MOSFET, 100V drain-source voltage, 59A continuous drain current, and 18mΩ maximum drain-source on-resistance. This silicon, metal-oxide semiconductor FET features a TO-263 package and a maximum power dissipation of 160W. Operating temperature range spans from -55°C to 175°C, with a nominal gate-source voltage of 4V. RoHS compliant and lead-free.
PackageTO-263
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Technical Specifications
International Rectifier IRF3710ZSTRLPBF technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 59A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 18MR |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF3710ZSTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF3710ZSTRLPBF to view detailed technical specifications.
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