N-Channel Power MOSFET, 100V drain-source voltage, 59A continuous drain current, and 18mΩ maximum drain-source on-resistance. This silicon, metal-oxide semiconductor FET features a TO-263 package and a maximum power dissipation of 160W. Operating temperature range spans from -55°C to 175°C, with a nominal gate-source voltage of 4V. RoHS compliant and lead-free.
PackageTO-263
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Technical Specifications
International Rectifier IRF3710ZSTRLPBF technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
59A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
18MR
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Nominal Vgs
4V
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3710ZSTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF3710ZSTRLPBF to view detailed technical specifications.
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