N-Channel Power MOSFET, 100V drain-source voltage, 59A continuous drain current, and 18mΩ maximum drain-source on-resistance. This silicon, metal-oxide semiconductor FET features a TO-263 package and a maximum power dissipation of 160W. Operating temperature range spans from -55°C to 175°C, with a nominal gate-source voltage of 4V. RoHS compliant and lead-free.
International Rectifier IRF3710ZSTRLPBF technical specifications.
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