International Rectifier
IRF3711ZLPBF
Power Field-Effect Transistor, 30A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
PackageTO-262
Current Rating92A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRF3711ZLPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 92A |
| Current Rating | 92A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 7.3mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 5.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.15nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 79W |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 15ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF3711ZLPBF Datasheet
Download the complete datasheet for International Rectifier IRF3711ZLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
