N-Channel Power MOSFET, TO-220AB package, featuring 20V Drain to Source Breakdown Voltage (Vdss) and 20V Gate to Source Voltage (Vgs). Offers a low 6mΩ Drain to Source On-Resistance (Rds On Max) and a continuous drain current of 92A. This silicon Metal-oxide Semiconductor FET operates with a threshold voltage of 2V and boasts fast switching times with a 5.4ns fall time. Designed for through-hole mounting, it supports a maximum power dissipation of 79W and operates within a temperature range of -55°C to 175°C.
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International Rectifier IRF3711ZPBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 92A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 7.3mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 5.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 2.15nF |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 79W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 12ns |
| Width | 4.69mm |
| RoHS | Compliant |
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