N-Channel Power MOSFET, D2PAK package, featuring 20V drain-source breakdown voltage and 92A continuous drain current. Offers low on-state resistance of 6mΩ (0.006Ω) at a nominal Vgs of 2V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 79W. This surface-mount component boasts fast switching characteristics with a turn-on delay of 12ns and fall time of 5.4ns.
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International Rectifier IRF3711ZSPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 92A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 7.3mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | 20V |
| Fall Time | 5.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 2.15nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| On-State Resistance | 6mR |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 79W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 12ns |
| Width | 9.65mm |
| RoHS | Compliant |
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