N-Channel Power MOSFET, 75V Drain-Source Voltage, 106A Continuous Drain Current, and 7mΩ Max Drain-Source On-Resistance. This silicon Metal-Oxide-Semiconductor FET features a D2PAK package for surface mounting, with a maximum power dissipation of 200W and an operating temperature range of -55°C to 175°C. Key switching characteristics include a 16ns turn-on delay and 120ns fall time.
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International Rectifier IRF3808SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 106A |
| Current Rating | 106A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 7MR |
| Dual Supply Voltage | 75V |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 5.31nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 93ns |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 75V |
| Width | 11.43mm |
| RoHS | Compliant |
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