N-Channel Power MOSFET, 75V Drain-Source Voltage, 106A Continuous Drain Current, and 7mΩ Max Drain-Source On-Resistance. This silicon Metal-Oxide-Semiconductor FET features a D2PAK package for surface mounting, with a maximum power dissipation of 200W and an operating temperature range of -55°C to 175°C. Key switching characteristics include a 16ns turn-on delay and 120ns fall time.
PackageD2PAK
Current Rating106A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3808SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
106A
Current Rating
106A
Drain to Source Breakdown Voltage
75V
Drain to Source Voltage (Vdss)
75V
Drain-source On Resistance-Max
7MR
Dual Supply Voltage
75V
Fall Time
120ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
5.31nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
200W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
93ns
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
68ns
Turn-On Delay Time
16ns
DC Rated Voltage
75V
Width
11.43mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3808SPBF Datasheet
Download the complete datasheet for International Rectifier IRF3808SPBF to view detailed technical specifications.
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