N-channel power MOSFET featuring 75V drain-source breakdown voltage and 7mΩ maximum on-state resistance. This single-element silicon metal-oxide semiconductor FET offers a continuous drain current of 106A and a maximum power dissipation of 200W. Designed for surface mounting in a D2PAK package, it operates from -55°C to 175°C and includes lead-free and RoHS compliant construction. Key switching characteristics include a 16ns turn-on delay and a 120ns fall time.
PackageD2PAK
MountingSurface Mount
Power200W
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Technical Specifications
International Rectifier IRF3808STRLPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
106A
Drain to Source Breakdown Voltage
75V
Drain to Source Resistance
7mR
Drain to Source Voltage (Vdss)
75V
Element Configuration
Single
Fall Time
120ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
5.31nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Surface Mount
Number of Elements
1
On-State Resistance
7MR
Package Quantity
1
Packaging
Tape and Reel
Power Dissipation
200W
Radiation Hardening
No
Rds On Max
7mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
68ns
Turn-On Delay Time
16ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3808STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF3808STRLPBF to view detailed technical specifications.
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