N-channel power MOSFET featuring 75V drain-source breakdown voltage and 7mΩ maximum on-state resistance. This single-element silicon metal-oxide semiconductor FET offers a continuous drain current of 106A and a maximum power dissipation of 200W. Designed for surface mounting in a D2PAK package, it operates from -55°C to 175°C and includes lead-free and RoHS compliant construction. Key switching characteristics include a 16ns turn-on delay and a 120ns fall time.
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International Rectifier IRF3808STRLPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 106A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 75V |
| Element Configuration | Single |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 5.31nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 7MR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 16ns |
| Width | 9.65mm |
| RoHS | Compliant |
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