
P-channel power MOSFET with 55V drain-source voltage and 42A continuous drain current. Features low 20mΩ drain-source on-resistance and 17W power dissipation. Surface-mount D2PAK package with 3.5nF input capacitance. Operates from -55°C to 150°C, with 18ns turn-on and 61ns turn-off delay times. Lead-free and RoHS compliant.
International Rectifier IRF4905SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 20mR |
| Dual Supply Voltage | -55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.69mm |
| Input Capacitance | 3.5nF |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 17W |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 61ns |
| Turn-On Delay Time | 18ns |
| Width | 8.81mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF4905SPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
