P-channel MOSFET for power applications, featuring a -55V drain-source voltage and 20mΩ maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET supports a continuous drain current of -74A and a maximum power dissipation of 200W. Designed for surface mounting, it operates within a temperature range of -55°C to 175°C and is housed in a TO-263 package. Key electrical characteristics include a 3.5nF input capacitance and a nominal gate-source voltage of 4V.
PackageTO-263
MountingSurface Mount
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Technical Specifications
International Rectifier IRF4905STRLPBF technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
-74A
Drain to Source Voltage (Vdss)
-55V
Drain-source On Resistance-Max
20mR
Dual Supply Voltage
55V
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
3.5nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Surface Mount
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
-4V
Turn-Off Delay Time
51ns
Turn-On Delay Time
20ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF4905STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF4905STRLPBF to view detailed technical specifications.
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