P-channel MOSFET for power applications, featuring a -55V drain-source voltage and 20mΩ maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET supports a continuous drain current of -74A and a maximum power dissipation of 200W. Designed for surface mounting, it operates within a temperature range of -55°C to 175°C and is housed in a TO-263 package. Key electrical characteristics include a 3.5nF input capacitance and a nominal gate-source voltage of 4V.
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International Rectifier IRF4905STRLPBF technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | -74A |
| Drain to Source Voltage (Vdss) | -55V |
| Drain-source On Resistance-Max | 20mR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 3.5nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 51ns |
| Turn-On Delay Time | 20ns |
| Width | 9.65mm |
| RoHS | Compliant |
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