P-Channel Power MOSFET featuring 55V drain-source voltage and 74A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 20mΩ Rds On resistance and 170W maximum power dissipation. Designed for surface mounting in a D2PAK package, it operates from -55°C to 175°C and includes lead-free and RoHS compliance. Ideal for power switching applications with fast switching speeds, indicated by 20ns turn-on and 51ns turn-off times.
PackageD2PAK
MountingSurface Mount
Power3.8W
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Technical Specifications
International Rectifier IRF4905STRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 74A |
| Drain to Source Voltage (Vdss) | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 3.5nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 51ns |
| Turn-On Delay Time | 20ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF4905STRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF4905STRRPBF to view detailed technical specifications.
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