International Rectifier
IRF510PBF
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Current Rating5.6A
MountingThrough Hole
Power43W
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Technical Specifications
International Rectifier IRF510PBF technical specifications.
General
Continuous Drain Current (ID)
5.6A
Current Rating
5.6A
Drain to Source Breakdown Voltage
100V
Fall Time
9.4ns
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
180pF
Lead Free
Lead Free
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
43W
Mount
Through Hole
Packaging
Bulk
Power Dissipation
43W
RoHS Compliant
Yes
Turn-Off Delay Time
15ns
Turn-On Delay Time
6.9ns
DC Rated Voltage
100V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF510PBF Datasheet
Download the complete datasheet for International Rectifier IRF510PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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