International Rectifier
IRF520N
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220-3
Current Rating9.7A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF520N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
9.7A
Current Rating
9.7A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
100V
Input Capacitance
330pF
Lead Free
Contains Lead
Max Power Dissipation
48W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Rds On Max
200mR
RoHS Compliant
No
Series
HEXFET®
DC Rated Voltage
100V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF520N Datasheet
Download the complete datasheet for International Rectifier IRF520N to view detailed technical specifications.
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