Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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International Rectifier IRF520N technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9.7A |
| Current Rating | 9.7A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 330pF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 48W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 200mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | 100V |
| RoHS | Not Compliant |
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