International Rectifier
IRF520NL
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
PackageTO-262-3
Current Rating9.7A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF520NL technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 9.7A |
| Current Rating | 9.7A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 330pF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 3.8W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 200mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF520NL Datasheet
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