IRF520NS

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

PackageTO-263-3

MountingSurface Mount

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International Rectifier IRF520NS technical specifications.

Package/Case

TO-263-3

Continuous Drain Current (ID)

9.7A

Drain to Source Voltage (Vdss)

100V

Input Capacitance

330pF

Max Power Dissipation

3.8W

Mount

Surface Mount

Package Quantity

Packaging

Rail/Tube

Rds On Max

200mR

RoHS Compliant

Series

HEXFET®

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.