International Rectifier
IRF520PBF
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Voltage100V
Current10A
Current Rating9.2A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF520PBF technical specifications.
General
Continuous Drain Current (ID)
9.2A
Current
10A
Current Rating
9.2A
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
360pF
Lead Free
Lead Free
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Packaging
Bulk
Power Dissipation
60W
RoHS Compliant
Yes
Turn-Off Delay Time
19ns
Turn-On Delay Time
8.8ns
Voltage
100V
DC Rated Voltage
100V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF520PBF Datasheet
Download the complete datasheet for International Rectifier IRF520PBF to view detailed technical specifications.
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