Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN
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International Rectifier IRF5210LPBF technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 60mR |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 10.54mm |
| Input Capacitance | 2.78nF |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 14ns |
| Width | 4.69mm |
| RoHS | Compliant |
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