International Rectifier
IRF5210LPBF
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN
PackageTO-262
MountingThrough Hole
Quick Jump:
Technical Specifications
International Rectifier IRF5210LPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
38A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
60mR
Dual Supply Voltage
100V
Gate to Source Voltage (Vgs)
20V
Height
10.54mm
Input Capacitance
2.78nF
Lead Free
Lead Free
Length
10.54mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Through Hole
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
72ns
Turn-On Delay Time
14ns
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF5210LPBF Datasheet
Download the complete datasheet for International Rectifier IRF5210LPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
