Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
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International Rectifier IRF5305L technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 31A |
| Current Rating | -31A |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance | 1.2nF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 3.8W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 60mR |
| RoHS Compliant | No |
| DC Rated Voltage | -55V |
| RoHS | Not Compliant |
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