P-channel power MOSFET with 55V drain-source breakdown voltage and 31A continuous drain current. Features a low 60mΩ drain-source on-resistance and 110W power dissipation. Designed for through-hole mounting in a TO-262 package, this silicon metal-oxide semiconductor FET offers fast switching with turn-on delay of 14ns and fall time of 63ns. Operating temperature range from -55°C to 175°C, with RoHS compliance.
PackageTO-262
MountingThrough Hole
PolarityP-CHANNEL
Power110W
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Technical Specifications
International Rectifier IRF5305LPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 31A |
| Drain to Source Breakdown Voltage | -55V |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 60mR |
| Fall Time | 63ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 14ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF5305LPBF Datasheet
Download the complete datasheet for International Rectifier IRF5305LPBF to view detailed technical specifications.
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