P-channel power MOSFET with 55V drain-source breakdown voltage and 31A continuous drain current. Features a low 60mΩ drain-source on-resistance and 110W power dissipation. Designed for through-hole mounting in a TO-262 package, this silicon metal-oxide semiconductor FET offers fast switching with turn-on delay of 14ns and fall time of 63ns. Operating temperature range from -55°C to 175°C, with RoHS compliance.
PackageTO-262
MountingThrough Hole
PolarityP-CHANNEL
Power110W
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Technical Specifications
International Rectifier IRF5305LPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
31A
Drain to Source Breakdown Voltage
-55V
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
60mR
Fall Time
63ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
1.2nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Through Hole
Nominal Vgs
-4V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
60mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
39ns
Turn-On Delay Time
14ns
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF5305LPBF Datasheet
Download the complete datasheet for International Rectifier IRF5305LPBF to view detailed technical specifications.
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