P-channel power MOSFET featuring a -55V drain-source voltage and 31A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 60mΩ drain-source on-resistance and 1.2nF input capacitance. Designed for surface mounting in a D2PAK package, it operates from -55°C to 175°C with a maximum power dissipation of 3.8W. The device is RoHS compliant and lead-free.
PackageD2PAK
Current Rating-31A
MountingSurface Mount
Power3.8W
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Technical Specifications
International Rectifier IRF5305SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
31A
Current Rating
-31A
Drain to Source Voltage (Vdss)
-55V
Drain-source On Resistance-Max
60mR
Dual Supply Voltage
-55V
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.2nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Nominal Vgs
-4V
Number of Elements
1
Power Dissipation
3.8W
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
39ns
Turn-On Delay Time
14ns
DC Rated Voltage
-55V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF5305SPBF Datasheet
Download the complete datasheet for International Rectifier IRF5305SPBF to view detailed technical specifications.
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