P-channel power MOSFET featuring a -55V drain-source voltage and 31A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 60mΩ drain-source on-resistance and 1.2nF input capacitance. Designed for surface mounting in a D2PAK package, it operates from -55°C to 175°C with a maximum power dissipation of 3.8W. The device is RoHS compliant and lead-free.
PackageD2PAK
Current Rating-31A
MountingSurface Mount
Power3.8W
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Technical Specifications
International Rectifier IRF5305SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 31A |
| Current Rating | -31A |
| Drain to Source Voltage (Vdss) | -55V |
| Drain-source On Resistance-Max | 60mR |
| Dual Supply Voltage | -55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| Power Dissipation | 3.8W |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -55V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF5305SPBF Datasheet
Download the complete datasheet for International Rectifier IRF5305SPBF to view detailed technical specifications.
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