N-Channel Power MOSFET featuring 100V drain-source voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.09-ohm drain-source on-resistance and a maximum power dissipation of 70W. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 9.2ns turn-on delay and 35ns turn-off delay.
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International Rectifier IRF530NPBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 90MR |
| Dual Supply Voltage | 100V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 920pF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 9.2ns |
| DC Rated Voltage | 100V |
| Width | 4.69mm |
| RoHS | Compliant |
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