N-Channel Power MOSFET featuring 100V drain-source voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.09-ohm drain-source on-resistance and a maximum power dissipation of 70W. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 9.2ns turn-on delay and 35ns turn-off delay.
PackageTO-220AB
Current Rating17A
MountingThrough Hole
Quick Jump:
Technical Specifications
International Rectifier IRF530NPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
17A
Current Rating
17A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
90MR
Dual Supply Voltage
100V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
920pF
Lead Free
Lead Free
Lead Pitch
2.54mm
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Through Hole
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
35ns
Turn-On Delay Time
9.2ns
DC Rated Voltage
100V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF530NPBF Datasheet
Download the complete datasheet for International Rectifier IRF530NPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
