International Rectifier
IRF530NSTRRPBF
Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
PackageD2PAK
Current Rating17A
MountingSurface Mount
Power3.8W
Quick Jump:
Technical Specifications
International Rectifier IRF530NSTRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 90MR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 9.2ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF530NSTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF530NSTRRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
