IRF530PBF

N-Channel Power MOSFET featuring 100V drain-source voltage and 14A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.16 ohm drain-to-source resistance and 88W power dissipation. Designed with a 20V gate-to-source voltage, it is presented in a TO-220AB package and is lead-free and RoHS compliant.