N-Channel Power MOSFET featuring 100V drain-source voltage and 14A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.16 ohm drain-to-source resistance and 88W power dissipation. Designed with a 20V gate-to-source voltage, it is presented in a TO-220AB package and is lead-free and RoHS compliant.
Voltage100V
Current14A
Current Rating14A
Power88W
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Technical Specifications
International Rectifier IRF530PBF technical specifications.
General
| Continuous Drain Current (ID) | 14A |
| Current | 14A |
| Current Rating | 14A |
| Drain to Source Resistance | 160mR |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 88W |
| RoHS Compliant | Yes |
| Voltage | 100V |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF530PBF Datasheet
Download the complete datasheet for International Rectifier IRF530PBF to view detailed technical specifications.
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