N-Channel Power MOSFET, 100V Drain-Source Voltage, 33A Continuous Drain Current, and 44mΩ Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-220AB through-hole package, 130W maximum power dissipation, and operates from -55°C to 175°C. Key parameters include a 4V threshold voltage and 1.96nF input capacitance.
PackageTO-220AB
Current Rating27A
MountingThrough Hole
PolarityN
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Technical Specifications
International Rectifier IRF540NPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
33A
Current Rating
27A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
44mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
44MR
Dual Supply Voltage
100V
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
1.96nF
Lead Free
Lead Free
Lead Pitch
2.54mm
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
130W
Mount
Through Hole
Nominal Vgs
4V
Polarization
N
Power Dissipation
130W
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Termination
Through Hole
Threshold Voltage
4V
Turn-Off Delay Time
39ns
Turn-On Delay Time
11ns
DC Rated Voltage
100V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF540NPBF Datasheet
Download the complete datasheet for International Rectifier IRF540NPBF to view detailed technical specifications.
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