N-Channel Power MOSFET, 100V Drain-Source Voltage, 33A Continuous Drain Current, and 44mΩ Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-220AB through-hole package, 130W maximum power dissipation, and operates from -55°C to 175°C. Key parameters include a 4V threshold voltage and 1.96nF input capacitance.
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International Rectifier IRF540NPBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 33A |
| Current Rating | 27A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 44mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 44MR |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 1.96nF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Polarization | N |
| Power Dissipation | 130W |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 100V |
| Width | 4.69mm |
| RoHS | Compliant |
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