N-Channel MOSFET, 100V Drain-Source Voltage, 36A Continuous Drain Current, and 26.5mΩ Max On-State Resistance. This silicon Metal-Oxide Semiconductor FET features a TO-220AB package for through-hole mounting, a maximum power dissipation of 92W, and operates from -55°C to 175°C. It includes a 15ns turn-on delay and 43ns turn-off delay, with a nominal gate-source voltage of 4V and a maximum gate-source voltage of 20V. This RoHS compliant component offers 1.77nF input capacitance.
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International Rectifier IRF540ZPBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 36A |
| Current Rating | 36A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 26.5MR |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 1.77nF |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 92W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| On-State Resistance | 26.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 100V |
| Width | 4.69mm |
| RoHS | Compliant |
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