N-channel power MOSFET featuring 100V drain-source breakdown voltage and 36A continuous drain current. This silicon metal-oxide semiconductor FET offers a low on-resistance of 0.0265 ohms and a maximum power dissipation of 92W. Designed for surface mounting in a D2PAK package, it operates from -55°C to 175°C and includes fast switching characteristics with turn-on delay time of 15ns and fall time of 39ns. RoHS compliant and lead-free.
PackageD2PAK
Current Rating36A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF540ZSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
36A
Current Rating
36A
Drain to Source Breakdown Voltage
100V
Drain to Source Voltage (Vdss)
100V
Fall Time
39ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.77nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
92W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
92W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
43ns
Turn-On Delay Time
15ns
DC Rated Voltage
100V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF540ZSPBF Datasheet
Download the complete datasheet for International Rectifier IRF540ZSPBF to view detailed technical specifications.
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