N-channel power MOSFET featuring 100V drain-source breakdown voltage and 36A continuous drain current. This silicon metal-oxide semiconductor FET offers a low on-resistance of 0.0265 ohms and a maximum power dissipation of 92W. Designed for surface mounting in a D2PAK package, it operates from -55°C to 175°C and includes fast switching characteristics with turn-on delay time of 15ns and fall time of 39ns. RoHS compliant and lead-free.
Sign in to ask questions about the International Rectifier IRF540ZSPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRF540ZSPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 36A |
| Current Rating | 36A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.77nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 92W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 92W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 100V |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF540ZSPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
