N-channel power MOSFET featuring 100V drain-source breakdown voltage and 36A continuous drain current. This silicon metal-oxide semiconductor FET offers a low on-resistance of 0.0265 ohms and a maximum power dissipation of 92W. Designed for surface mounting in a D2PAK package, it operates from -55°C to 175°C and includes fast switching characteristics with turn-on delay time of 15ns and fall time of 39ns. RoHS compliant and lead-free.
PackageD2PAK
Current Rating36A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF540ZSPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 36A |
| Current Rating | 36A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.77nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 92W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 92W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 100V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF540ZSPBF Datasheet
Download the complete datasheet for International Rectifier IRF540ZSPBF to view detailed technical specifications.
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