P-channel MOSFET for surface mount applications, featuring a -30V drain-source breakdown voltage and 4A continuous drain current. This device offers a low Rds(on) of 85mR at a nominal gate-source voltage of -1V. With a maximum power dissipation of 2W and operating temperature range of -55°C to 150°C, it is packaged in TSOP for tape and reel distribution. RoHS compliant and lead-free, this transistor exhibits a turn-on delay of 11.4ns and turn-off delay of 24ns.
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International Rectifier IRF5800TRPBF technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | -30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 535pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 85mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 11.4ns |
| RoHS | Compliant |
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