P-channel MOSFET for surface mount applications, featuring a -30V drain-source breakdown voltage and 4A continuous drain current. This device offers a low Rds(on) of 85mR at a nominal gate-source voltage of -1V. With a maximum power dissipation of 2W and operating temperature range of -55°C to 150°C, it is packaged in TSOP for tape and reel distribution. RoHS compliant and lead-free, this transistor exhibits a turn-on delay of 11.4ns and turn-off delay of 24ns.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
International Rectifier IRF5800TRPBF technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
4A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
150mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
-30V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
535pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
-1V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
85mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
-1V
Turn-Off Delay Time
24ns
Turn-On Delay Time
11.4ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF5800TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF5800TRPBF to view detailed technical specifications.
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