The IRF5801TRPBF is a 200V N-Channel MOSFET with a continuous drain current of 600mA. It features a drain-source on resistance of 2.2 ohms and a gate to source voltage of 30V. The device is packaged in a lead-free TSOP-6 package and is suitable for surface mount applications. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W.
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International Rectifier IRF5801TRPBF technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 2.2R |
| Dual Supply Voltage | 200V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 0.9mm |
| Input Capacitance | 88pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 5.5V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 8.8ns |
| Turn-On Delay Time | 6.5ns |
| Width | 1.5mm |
| RoHS | Compliant |
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