International Rectifier
IRF5801TRPBF
Power Field-Effect Transistor, 0.6A I(D), 200V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, LEAD FREE, TSOP-6
PackageTSOP
MountingSurface Mount
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Technical Specifications
International Rectifier IRF5801TRPBF technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
600mA
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
2.2R
Dual Supply Voltage
200V
Gate to Source Voltage (Vgs)
30V
Height
0.9mm
Input Capacitance
88pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
5.5V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
8.8ns
Turn-On Delay Time
6.5ns
Width
1.5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF5801TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF5801TRPBF to view detailed technical specifications.
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