P-channel MOSFET transistor in TSOP package, featuring a 20V Drain-Source Breakdown Voltage and 2.9A Continuous Drain Current. Offers a maximum Drain-Source On Resistance of 90mR and a Gate-Source Voltage rating of 12V. This surface mount device operates across a temperature range of -55°C to 150°C, with a maximum power dissipation of 960mW. Includes a 650pF input capacitance and fast switching times with a 8.2ns turn-on delay.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power960mW
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Technical Specifications
International Rectifier IRF5810TRPBF technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
2.9A
Drain to Source Breakdown Voltage
-20V
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
90MR
Dual Supply Voltage
-20V
Fall Time
53ns
Gate to Source Voltage (Vgs)
12V
Height
1.3mm
Input Capacitance
650pF
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
960mW
Mount
Surface Mount
Nominal Vgs
-1.2V
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
960mW
Radiation Hardening
No
Rds On Max
90mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
-1.2V
Turn-Off Delay Time
62ns
Turn-On Delay Time
8.2ns
Width
1.75mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF5810TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF5810TRPBF to view detailed technical specifications.
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