
P-channel MOSFET transistor in TSOP package, featuring a 20V Drain-Source Breakdown Voltage and 2.9A Continuous Drain Current. Offers a maximum Drain-Source On Resistance of 90mR and a Gate-Source Voltage rating of 12V. This surface mount device operates across a temperature range of -55°C to 150°C, with a maximum power dissipation of 960mW. Includes a 650pF input capacitance and fast switching times with a 8.2ns turn-on delay.
International Rectifier IRF5810TRPBF technical specifications.
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